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Electroluminescence and Spectral Shift of CdS Nanoparticles on Si Wafer

Published online by Cambridge University Press:  21 March 2011

Eih-Zhe Liang ,
Ching-Fuh Lin ,
Sheng-Ming Shih  and
Wei-Fang Su
Eih-Zhe Liang
Affiliation:
Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
Ching-Fuh Lin
Affiliation:
Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
Sheng-Ming Shih
Affiliation:
Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
Wei-Fang Su
Affiliation:
Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.
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Abstract

Preparation of CdS nanoparticles, devices fabrication, and electroluminescence properties at room temperature of CdS nanoparticles on silicon substrates are reported. A spectral shift of 86-meV of free exciton transition was observed that was due to the passivation of p-hydroxyl thiophenol molecules around nanoparticles. Controlled process conditions such as heat treatment and/or with oxygen-rich environment are experimented and found to have significant influences on emission spectra. Radiative recombination corresponding to oxygen-impurity level, 273 meV below bandgap energy, presents in samples prepared in oxygen-rich environment. In addition to such mechanism, coalescence of nanoparticles into bulk form also exists and contributes to enhanced luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H3.6.1
Copyright
Copyright © Materials Research Society 2002

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