Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:59:26.409Z Has data issue: false hasContentIssue false

Electrochromic WO3-x and Colossal Magnetoresistive (La, Sr)MnO3 Perovskite Oxide Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Fumiaki Mitsugi
Affiliation:
Department of the Electrical and Computer Engineering, and Graduate school of Science and technology, Kumamoto University, Kurokami 2-39-1, Kumamoto, Kumamoto 860-8555, Japan
Eiichi Hiraiwa
Affiliation:
Department of the Electrical and Computer Engineering, and Graduate school of Science and technology, Kumamoto University, Kurokami 2-39-1, Kumamoto, Kumamoto 860-8555, Japan
Tomoaki Ikegami
Affiliation:
Department of the Electrical and Computer Engineering, and Graduate school of Science and technology, Kumamoto University, Kurokami 2-39-1, Kumamoto, Kumamoto 860-8555, Japan
Kenji Ebihara
Affiliation:
Department of the Electrical and Computer Engineering, and Graduate school of Science and technology, Kumamoto University, Kurokami 2-39-1, Kumamoto, Kumamoto 860-8555, Japan
Yoshiaki Suda
Affiliation:
Department of Electrical Engineering, Sasebo National College of Technology, Okishin 1-1, Sasebo, Nagasaki 857-1193, Japan
Get access

Abstract

The functional oxide thin films of electrochromic WO3-x and colossal magnetoresistive La0.8Sr0.2MnO3 were prepared by a KrF excimer pulsed laser deposition technique. Optical transparency and electrical conductivity of the WO3-x film were changed by the oxygen content in the lattice. Triclinic, tetragonal and amorphous WO3-x films were prepared by adjusting the oxygen atmosphere during the deposition. We revealed the relationship between the crystal structure and the gas sensing property of the films. The triclinic WO3-x film (1 μm) showed the high sensitivity to NO (60 ppm) gas at an operating temperature of 150°C. The colossal magnetoresistive La0.8Sr0.2MnO3 thin film having the MR ratio of 15 % (H=7 kG) was deposited under the conditions of the laser energy density of 2 J/cm2 (5Hz), substrate temperature of 850°C and oxygen pressure of 500 mTorr. The magnetic sensor composing of the La0.8Sr0.2MnO3 thin film responded to the AC magnetic field (1 kHz).

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Penza, M., Tagliente, M. A., Mirenghi, L., Gerardi, C., Martucci, C. and Cassano, G., Sensors and Actuators B 50, 9 (1998).Google Scholar
2. Kim, T. S., Kim, Y. B., Yoo, K. S., Sung, G. S. and Jung, H. J., Sensors and Actuators B 62, 102 (1998).Google Scholar
3. Lee, D., Nam, K. and Lee, D., Thin Solid Films 375, 142 (2000).Google Scholar
4. Zhao, Y., Feng, Z. and Liang, Y., Sensors and Actuators B 66, 171 (2000).Google Scholar
5. Khartsev, S. I., Johnsson, P. and Grishin, A. M., J. Appl. Phys. 87, 2394 (2000).Google Scholar
6. Urshibara, A., Moritomo, Y., Arima, T., Asamitsu, A., Kido, G. and Tokura, Y., Phys. Rev. B 51, 14103 (1995).Google Scholar
7. Goyal, A., Rajeswari, M., Shreekala, R., Lofland, S. E., Bhagat, S. M., Boettcher, T., Kwon, C., Ramesh, R. and Venkatesan, T., Appl. Phys. Lett. 71, 2535 (1997).Google Scholar
8. Mitsugi, F., Ikegami, T., Ebihara, K., Narayan, J., Grishin, A. M., Transactions of the Materials Research Society of Japan 25, 357 (2000).Google Scholar
9. Mitsugi, F., Ikegami, T., Ebihara, K., Grishin, A. M. and Narayan, J., Trans. IEE of Japan 120-A, 1032 (2000).Google Scholar
10. Mitsugi, F., Ikegami, T., Ebihara, K., Narayan, J. and Grishin, A. M., Science and Technology of Advanced Materials 2, 525 (2001).Google Scholar
11. Mitsugi, F., Ikegami, T., Ebihara, K., Narayan, J. and Grishin, A. M. in Transport and Microstructural Phenomena in Oxide electronics, edited by Ginley, D. S., Paine, D. C., Hawley, M. E., Streiffer, S. K. and Blank, D. H. A., (Mater. Res. Soc. Proc. 666, 2001) pp. F3.33.3.6. Google Scholar