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Electrochemical Modification of La2CuO4: The Role Played by Microstructure

Published online by Cambridge University Press:  10 February 2011

E. J. Williams
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Riischlikon, Switzerland DPMC, Université de Genève, CH-1211 Genève, Switzerland
A. Daridon
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Riischlikon, Switzerland Institut für Anorganische Chemie, Universität Bern, CH-3012 Bern, Switzerland
F. Arrouy
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Riischlikon, Switzerland
J. Fompeyrine
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Riischlikon, Switzerland Institut für Anorganische Chemie, Universität Bern, CH-3012 Bern, Switzerland
E. Mächler
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Riischlikon, Switzerland
H. Siegenthaler
Affiliation:
Institut für Anorganische Chemie, Universität Bern, CH-3012 Bern, Switzerland
J.-P. Locquet
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Riischlikon, Switzerland
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Abstract

Using electrochemical oxidation as a probe technique for the mechanisms by which oxidation occurs in c-axis La2CuO4 films, the vital role played by specific through-film microstructural defects has been observed using transmission electron microscopy. These defects are namely the large through-film precipitates sometimes found in these films and {111} planar faults. Two high-oxygen-content phases are formed; one locally and with a superstructure, the other of reduced orthor-hombicity and larger c-axis than as-grown material. Some films were found not to oxidize, and the defects in these films were compared with those in the oxidizable films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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