Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T09:53:38.315Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition

Published online by Cambridge University Press:  15 February 2011

S. Han ,
K. H. Yoon ,
K. H. Kim ,
H. G. Jang ,
S. C. Choi ,
H. J. Jung  and
S. K. Koh
S. Han
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
K. H. Yoon
Affiliation:
Dept. of Ceramic Eng. Yonsei Univ., 120–701, Seoul, Korea
K. H. Kim
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
H. G. Jang
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
S. C. Choi
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
H. J. Jung
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
S. K. Koh
Affiliation:
Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130–650, Korea
Get access

Abstract

Copper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 245
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vinch, R. P., Zielinski, E. M., and Bravman, J. C., Thin Solid Films 262, p. 142 (1995).Google Scholar
2. Kim, J. Y., Marzouk, H. A., Reucroft, P. J., Eloi, C. C., and Robertson, J. D., J. Appl. Phys. 78, p. 245(1995).Google Scholar
3. Igarashi, Y., Yamanobe, T., and Ito, T., J. Electrochem. Soc. 142, p. L36 (1995).Google Scholar
4. Takagi, T., J. Vac. Sci. Technol. A 2, p. 382 (1984).Google Scholar
5. Yamada, I., Takagi, T., IEEE Trans. Electron Devices ED–34, p. 1018 (1987).Google Scholar
6. Koh, S. K., Kim, K. H., Choi, W. K., Jang, H. G., Yoon, Y. S., Han, S., and Jung, H. J., Materials Modification and Synthesis bzyon Beam Processing, edited by Alexander, D. E., Skorupa, W., Cheung, N. W., Park, B. (Mater. Res. Soc. Proc. 396, Pittsburgh, PA 1996), p. 581–586.Google Scholar
7. Harper, M. E., Cuomo, J. J., and Kaufmann, H. R., J. Vac. Sci. Technol. 21, p. 737 (1982)Google Scholar
8. Roy, R. A., Cuomo, J. J., and Yee, D. S., J. Vac. Sci. Technol. A 6, p. 1621 (1988).Google Scholar
9. Kay, E. and Rossnagel, S.M., Handbook of ion beam processing technology edited by Cuomo, J.J., Rossnagel, S.M., and Kaufmann, H.R., New Jersey, p. 170–193.Google Scholar
10. Brown, W. L., Jarrold, M. F., McEachern, R. L., Sosnowski, M., Takaoka, G., Usui, H., and Yamada, I., Nucl. Instrum. Methods Phys. Res. B 59/60, p. 182 (1991).Google Scholar
11. Thompson, C. V., and Carel, Roland, Mater. Sci. Eng. B 32, p. 211(1995).Google Scholar
12. Murarka, S. P., Metallization-theory and practice for VLSI and ULSI, Butterworth-Heinemann, stoneham, 1993, p. 41–46.Google Scholar
13. Teller, C.R. and Tosser, A. J., Size Effect in Thin Film, Elsevier, New York, 1982.Google Scholar