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Electrical Properties of Si/SiGe Structures Grown by Low Temperature Epitaxy

Published online by Cambridge University Press:  25 February 2011

H. Temkin ,
M. L. Green ,
D. Brasena  and
J. C. Bean
H. Temkin
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
M. L. Green
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. Brasena
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Si/SiGe heterostructures offer improved performance for many electronic and optoelectronic Si devices. The expected improvement in device characteristics depends critically on the structural perfection and precise compositional control of the epitaxial layers. This implies a combination of abrupt interfaces, on the order of 10 Å, capability of maintaining high doping levels, in the 1019 cm−3 range, with a similar spatial resolution, and low density of electrically active defects. These requirements are particularly stringent in the case of Ge-rich alloys for which the critical layer thicknesses are below ∼100 Å. The desired characteristics can be obtained by low temperature techniques such as molecular beam epitaxy (MBE) and rapid thermal chemical vapor deposition (RTCVD).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 65
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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