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The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).

Published online by Cambridge University Press:  22 February 2011

Sang S. Kim ,
D. V. Tsu  and
G. Lucovsky
Sang S. Kim
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695-8202
D. V. Tsu
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
North Carolina State University, Dept. of Physics, Raleigh, NC 27695-8202
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Abstract

We have constructed an Ultra High Vacuum (UHV) multichamber system and have deposited ‘gate quality’ silicon dioxide by the remote plasma enhanced chemical vapor deposition (Remote PECVD) process at low substrate temperatures (Ts ≤400 °C). Native oxides and other surface contaminants are removed under ultra high vacuum (UHV) conditions and the character of the semiconductor surface is determined prior to film deposition using in-situ Reflection High Energy Electron Defraction (RHEED). Measurents made on MOS structures of capacitance-voltage, current-voltage, field break-down, hysteresis, and mobile ion drift indicate that these films are ‘comparable’ to thermally (Ts >1100 °C) grown oxides. The structural properties of the films arg studied by ir spectroscopy and ellipsometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 121
Copyright
Copyright © Materials Research Society 1988

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