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Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
Published online by Cambridge University Press: 03 September 2012
Abstract
Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.
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- Copyright © Materials Research Society 1999
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