Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T19:15:56.963Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

Published online by Cambridge University Press:  21 March 2011

J. Kim ,
B. Luo ,
R. Mehandru ,
F. Ren ,
K. P. Lee ,
S.J. Pearton ,
A.Y. Polyakov ,
N.B. Smirnov ,
A.V. Govorkov  and
A.V. Osinsky
...Show all authors
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
K. P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL;
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL;
A.Y. Polyakov
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
N.B. Smirnov
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
A.V. Govorkov
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
A.V. Osinsky
Affiliation:
Corning Applied Technologies, Woburn, MA 01801
P.E. Norris
Affiliation:
Corning Applied Technologies, Woburn, MA 01801
Get access

Abstract

Effects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.16.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Diodes, Laser, in GaN and Related Materials II, ed. Pearton, S.J. (Gordon and Breach Science Publishers, the Netherlands, 1999) pp.1–46 Google Scholar
2. Yunovich, A.E., Kovalev, A.N., Kudryashov, V.E., Manyakhin, F.I., Turkin, A.N. (Mat. Res. Soc. Symp. Proc. 482, Warrendale, PA, 1998) pp.1041–1047 Google Scholar
3. Eliseev, P.G., Perlin, P., Lee, J., Osinsky, M., Appl. Phys. Lett. 71, 569 (1997)Google Scholar
4. Pearton, S.J., Zolper, J.C., Shul, R.J. and Ren, F., J.Appl.Phys. 86, 1 (1999).Google Scholar
5. Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Mil'vidskii, M.G., Usikov, A.S., Pushnyi, B.V., Lundin, W.V., Solid State Electronics, 43, 1929 (1999)Google Scholar
6. Lang, D.V., Panish, M.B., Capasso, F., Allam, J., Hamm, R.A., Sergent, A.M. and Tsang, W.T., Appl. Phys. Lett. 50, 736 (1987)Google Scholar
7. Berman, L.S. and Lebedev, A.A., Capacitance Spectroscopy of Deep Centers in Semiconductors (Leningrad, Nauka, 1981) (in Russian)Google Scholar
8. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys., 28, L2112 (1989)Google Scholar
9. Polyakov, A.Y, Smirnov, N.B., Govorkov, A.V., Zhang, A.P., Ren, F., Pearton, S.J., Chyi, J.-I., Nee, T.-E., Chuo, C.-C. and Lee, C.M., Solid-State Electronics, 44, 1549 (2000)Google Scholar