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Electrical Contact and Adhesion Modification Produced by High Energy Heavy Ion Bombardment of Au Films on GaAsa

Published online by Cambridge University Press:  26 February 2011

R. P. Livi ,
S. Paine ,
C. R. Wie ,
M. H. Mendenhall ,
J. Y. Tang ,
T. Vreeland Jr  and
T. A. Tombrello
R. P. Livi
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
S. Paine
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
C. R. Wie
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
M. H. Mendenhall
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
J. Y. Tang
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
T. Vreeland Jr
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
T. A. Tombrello
Affiliation:
Divisions of Physics, Mathematics, Astronomy and Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125
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Abstract

Thin gold films over GaAs wafers with different dopants (Cr, Si, Te, and Zn) were used to study the role of he substrate electronic properties in the electrical contact and adhesion modification induced by MeV/nucleon heavy ion bombardment. The enhanced adhesion was studied using a scratch test; the results show very different modifications of adhesion depending on the bulk electronic properties of the substrate. The sample with a Cr compensation doped substrate showed enhancement in adhesion for beam doses as low as 1012 ions/cm2, but Si and Te doped (n–type) substrates showed a sudden enhancement in adhesion for doses around 1014 ions/cm2. Samples with Si and Te doped substrates were used to sudy the bombarding ion dE/dx dependence of the induced adhesion for 19F and 35C1 ions with electronic stopping power ranging from 161 eV/Å to 506 eV/Å. In this range the dose threshold fgfjhe ops! of induced adhesion has a power law dependence, D = D0(dE/dx)− (1.90 ± 1.0)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 467
Copyright
Copyright © Materials Research Society 1985

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Footnotes

b

Permanent address: Instituto de Fisica, Universidade Federal do Rio Grande do Sul, 90000-Porto Alegre-Brasil, acknowledges a Fellowship from CNPq-Brasil.

c

permanent address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139.

d

Permanent address: Physics Department, Vanderbilt University, Nashville, Tennessee 37235.

e

Permanent address: Nuclear Physics Division, Fudan University, Shanghai, People's Republic of China.

a

Work supported in part by the National Science Foundation (DMR83-18274) and the IBM Corporation.

References

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