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Electrical Characterization of Silicon With Buried Defects

Published online by Cambridge University Press:  26 February 2011

J. Honeycutt ,
Z. Radzimski ,
R. R. Kola ,
A. S. M. Salih  and
G. A. Rozgonyi
J. Honeycutt
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
Z. Radzimski
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
R. R. Kola
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
A. S. M. Salih
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
G. A. Rozgonyi
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695-7916
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Abstract

Depth-dependent electrical characterization of epitaxial silicon extrinsically gettered with intentionally introduced misfit dislocations is described. To study the effect of buried defects on minority carrier lifetime, a modified Zerbst analysis of the MOS capacitance vs. time response was used to determine generation lifetime as a function of space charge region width. In addition, SEMEBIC imaging at different electron beam energies and EBIC imaging of cross-sections were used to investigate the depth-dependent electrical behavior of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 121
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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4.Radzimski, Z., Honeycutt, J., and Rozgonyi, G. A., IEEE Trans. Elec. Dev.ED 35, 80 (1988)Google Scholar
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