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Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

Published online by Cambridge University Press:  15 February 2011

Bijan Tadayon ,
Mohammad Fatemi ,
Saied Tadayon ,
F. Moore  and
Harry Dietrich
Bijan Tadayon
Affiliation:
Code 6856, Naval Research Laboratory, Washington, DC 20375
Mohammad Fatemi
Affiliation:
Code 6856, Naval Research Laboratory, Washington, DC 20375
Saied Tadayon
Affiliation:
COMSAT Lab, 22300 COMSAT Dr., Clarksburg, MD 20871
F. Moore
Affiliation:
Code 6856, Naval Research Laboratory, Washington, DC 20375
Harry Dietrich
Affiliation:
Code 6856, Naval Research Laboratory, Washington, DC 20375
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Abstract

We present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 199
Copyright
Copyright © Materials Research Society 1992

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References

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