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Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

Published online by Cambridge University Press:  01 February 2011

I. Salama ,
N. R Quick ,
A. Kar  and
Gilyong Chung
I. Salama
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMMP), School of Optics, Mechanical, Materials, and Aerospace Engineering Department, Center for Research and Education in Optics and Lasers (CREOL), University of Central Florida, Orlando, FL 32816-2700.
N. R Quick
Affiliation:
Applicote Associates, 894 Silverado Court, Lake Mary, FL 32746.
A. Kar
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMMP), School of Optics, Mechanical, Materials, and Aerospace Engineering Department, Center for Research and Education in Optics and Lasers (CREOL), University of Central Florida, Orlando, FL 32816-2700. Electronic mail: [email protected]
Gilyong Chung
Affiliation:
Sterling Semiconductor, Inc. 3401 Cragmont Drive, Tampa, FL 33619.
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Abstract

Highly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laserdirect write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F3.2
Copyright
Copyright © Materials Research Society 2002

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References

1. Levinshtein, M. E., Rumayantsev, S. L. and Shur, M. S., “Properties of Advanced Semiconductor Materials”, 1st Edition (John Wiley & Sons, New York, 2001) pp. 93–147.Google Scholar
2. Madelung, O., ‘Data in Science and Technology: Semiconductors Group IV Elements and IIIV Compounds‘ (Springer-Verlag, Berlin, 1991) p.101.Google Scholar
3. Shin, H., Hong, S., Wetteroth, T., Wilson, S. R.. Schroder, D. K., Appl. Phys. Lett. 72, 1199, (1998).Google Scholar
4. Pengelly, R., Compound Semiconductor, issue 6 No.4 (2000).Google Scholar
5. Navon, D. H., Electronic Materials and Devices, 1st Edition (Boston: Houghton company 1975) pp.133–135.Google Scholar
6. Quick, N. R., in proceedings of International Symposium on Novel Techniques in Synthesis and Processing of Advanced Materials‘, edited by Singh, J. and Copley, S. M. (TMS, Warrendale, PA, 1994) p. 419.Google Scholar
7. Quick, N. R. in ‘Proceedings of the International Conference on Lasers' 94‘ edited by Corcoran, V. J. and Goldman, T.A. (STS press, Virginia, 1995) p. 696.Google Scholar
8. Quick, N. R., Converting ceramic materials to electrical conductors and semiconductors, US Patent No 5145741 (Sept. 1992).Google Scholar
9. Quick, N. R., Laser synthesized ceramic electronic devices and circuits, US Patent No 5837607 (Nov. 1998).Google Scholar
10. Quick, N. R., Laser synthesized ceramic electronic devices method of making, US Patent No 6025609 (Feb.2000).Google Scholar
11. Quick, N. R., method for making laser synthesized ceramic electronic devices and circuits, US Patent No 6054375 (April 2000).Google Scholar
12. Sengupta, D. K., Quick, N. R., Kar, A., J. Laser Applications 13, 26 (2001)Google Scholar
[13] Salama, I., Quick, N. R., Kar, A., ‘Laser Doping of SiC substrates’, J. Elec. Mats. 31, 3, 200–208 (2002).Google Scholar
14. Salama, I. A., Quick, N.R., and Kar, A. ‘Microstructural Effects on Electrical Resistance in Laser-treated Silicon Carbide‘ Submitted for publication in Mater. Sci. Eng.B.Google Scholar
15. Salama, I.A., Quick, N.R., and Kar, A. in ‘Surface Engineering: Science & Technology II’ Edited by Kumar, Ashok, Chung, Yip-Wah, Moore, John J., Doll, Gary L., Yatsui, Kyoshi and Misra, D.S..(TMS, Annual Meeting Proc., Warrendale, PA 2002) pp 113–124.Google Scholar
16. Salama, I., Quick, N. R., and Kar, A. ‘Direct Writing and Doping in Polycrystalline Diamond for Electronic Device Applications‘ prepared for publications.Google Scholar
17. Harris, G. L. ‘Properties of Silicon Carbide’ (INSPEC; the Institute of Electrical Engineers, London, 1995) pp. 153–157.Google Scholar
18. Krishnan, S., Couto, G.C, Chaudhry, M.I, and Babu, S.V.. J. Mat. Res. 10, 11 (1995) pp. 2723–2727.Google Scholar