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Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

Published online by Cambridge University Press:  01 February 2011

Thottam S Kalkur ,
Jeff Whitescarver  and
Nick Cramer
Thottam S Kalkur
Affiliation:
[email protected], University of Colorado at Colorado Springs, Department of Electrical and Computer Engineering, 1420, Austin Bluff Parkway, Colorado Springs, 80933-7150, United States
Jeff Whitescarver
Affiliation:
[email protected], University of Colorado at Colorado Springs, Colorado Springs, 80933-7150, United States
Nick Cramer
Affiliation:
[email protected], University of Colorado at Colorado Springs, Colorado Springs, 80933-7150, United States
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Abstract

Ti-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.

Keywords

annealingferroelectricPt
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG14-10
Copyright
Copyright © Materials Research Society 2006

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References

1. Kramer, N., Kalkur, T.S., Philofsky, E. and Kammerdiner, L., “Dielectric Properties of Ba0.5Sr0.5TiO3 thin films from DC to KA Band”, Integrated Ferroelectrics, vol.52, pp.413–420, 2003.Google Scholar
2. Fuji, et al. , “ULSI DRAM Technology with BaSrTiO3 on 1.3nm equivalent SiO2 thickness and 10-9A/cm2 leakage current”, International Electron Devices Meeting (IEDM) Tech. Digest, 267–270 (1992).Google Scholar
3. Yi, Wu, Kalkur, T.S., Kammerdiner, Lee, Philofsky, Elliott and Rywak, Tony, “Electrical Characteristics of BST films on Pt/Ti/SiO2/Si”, Thin Solid Films, Vol.402, 1-2, 307–310, Feb.2002.Google Scholar
4. Kingon, A.I., Streiffer, S.K., Basceri, C. and Sommerfelt, S.R., MRS Bulletin, 21, 7, 46 (1996).Google Scholar
5. Nagel, N., Costrini, G., Lian, J., Athavale, S., Economikos, L., Baniecki, J. and Wise, M., Integrated Ferroelectrics, vol.38, 259–267 (2001).Google Scholar
6. Cha, S.Y., Jhang, B.K., Lee, H.C., “Effect of Iridium Electrodes on the dielectric constants of BST films”, Japan Journal of Appl. Phys., vol.38, L–49, (1999).Google Scholar
7. Cramer, N., Phiofsky, Elliot, Kammerdiner, Lee and Kalkur, T.S., MRS proceedings, vol.811, D 8.5 (2004).Google Scholar
8. Dhote, A.M., Auciello, O., Gruen, D.M., and Ramesh, R., “Studies of thin film growth and oxidation processes for conducting TiAl diffusion barrier layers via in situ surface sensitive analytical techniques,” Appl. Phys. Letts. 79 (6), 1 (2001).Google Scholar
9. Aggarwal, S., Nagaraj, B., Genkins, I., Li, H., Sharma, R.P., Salamanca-Riba, L., Ramesh, R.; Dhote, A.M., Krauss, A.R. and Auciello, O. Correlation between oxidation resistance and crystalinity of Ti-Al as barrier layer for high-density non-volatile ferroelectric memories, Acta Materialia. 48 (13) 3387 (2000)Google Scholar