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The Electrical Characteristics of a Pd/AlN/Si Thin Film Hydrogen Gas Sensor

Published online by Cambridge University Press:  26 February 2011

Erik F. McCullen ,
Haripriya E. Prakasam ,
Wenjun Mo ,
Jagdish Thakur ,
Ratna Naik ,
Lajos Rimai ,
K.Y.S. Ng  and
Gregory W. Auner
Erik F. McCullen
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI
Haripriya E. Prakasam
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
Wenjun Mo
Affiliation:
Department of Chemical Engineering, Wayne State University, Detroit, MI
Jagdish Thakur
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
Ratna Naik
Affiliation:
Department of Physics and Astronomy, Wayne State University, Detroit, MI
Lajos Rimai
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
K.Y.S. Ng
Affiliation:
Department of Chemical Engineering, Wayne State University, Detroit, MI
Gregory W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
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Abstract

We have extended our previous investigation of the electrical characteristics of a Pd/AlN/Si thin film sensor for varying thicknesses of AlN, from 300–2000Å. The capacitance vs. voltage, C(V), and conductance vs. voltage, G(V), measurements were utilized to investigate the presence of surface states within the Si gap at the AlN/Si interface. Our previous experiments on 500Å AlN did show the presence of interface traps, with an estimated surface density between 8×1014 and 1.5×1015 m−2eV−1 [1]. In our present work we've examined the effect of AlN thickness on the density of these interface traps. The density is dependent on AlN thickness. The thinner devices, 300Å, showed an interface trap density of 20–30×1015 m−2eV−1. The interface trap density decreased with increasing thickness up to 500Å, where the density remained relatively constant at about 1–5×1015 m−2eV−1 for thicknesses up to 2000Å. We have also shown that the interface trap density is independent of annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 801: Symposium BB – Materials and Technologies for a Hydrogen Economy , 2003 , BB6.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. McCullen, E.F., Prakasam, H.E., Mo, Wenjun, Naik, R., Ng, K.Y.S., Rimai, L., and Auner, G.W., J. Appl. Phys. 93, 5757 (2003).Google Scholar
2. Lundstrom, I., Shivaraman, M.S., Svensson, C.M., and Lundkvist, L., Appl. Phys. Lett. 26, 55 (1975).Google Scholar
3. Lundstrom, I., Shivaraman, M.S., and Svensson, C.M., J. Appl. Phys. 46, 3876 (1975).Google Scholar
4. Shivaraman, M.S., Lundstrom, I., Svensson, C.M., and Hammarsten, H., Electron. Lett. 12, 483 (1976).Google Scholar
5. Petersson, L.-G., Dannetun, H.M., Fogelberg, J., and Lundstrom, I., J. Appl. Phys. 58, 404 (1985).Google Scholar
6. Lundstrom, I., Armgarth, M., and Petersson, L.-G., CRC Crit. Rev. Solid State Mater. Sci. 15, 201 (1989).Google Scholar
7. Baranzahi, A., Lloyd Spetz, A., Andersson, B., and Lundstrom, I., Sens. Actuators B 26–27, 165 (1995).Google Scholar
8. Zhang, X., Walker, D., Saxler, A., Kung, P., Xu, J., and Razeghi, M., Elec. Lett. 32, 1622 (1996).Google Scholar
9. Hong, S., Han, G., Paek, M., Cho, K., and Yoon, S., Electrochem. Solid State Lett., 5, G54 (2002).Google Scholar
10. Liu, R., Ponce, F.A., Dadgar, A., and Krost, A., Appl. Phys. Lett., 83, 860 (2003).Google Scholar
11. Xi, D.J., Zheng, Y.D., Chen, P., Chu, R.M., Gu, S.L., Shen, B., Zhang, R., Optical Mat., 23, 143 (2003).Google Scholar
12. Nicollian, E.H. and Brews, J.R., “MOS (Metal Oxide Semiconductor) Physics and Technology” (Wiley, New York, 1982), Chap. 5.Google Scholar
13. Auner, G.W., Lenane, T., Ahmad, F., Naik, R., Kuo, P.K., and Wu, Z.L., “Wide Bandgap Electronic Materials” (Academic, New York, 1995), p. 329.Google Scholar
14. Serina, F., Huang, C., Auner, G.W., Naik, R., Ng, S., and Rimai, L., Mater. Res. Sci. Symp. Proc. 622, T13.1 (2000).Google Scholar
15. Adam, T., Kolodzey, J., Swann, C.P., Tsao, M.W., Rabolt, J.F., Appl. Surf. Sci., 175–176, 428 (2001).Google Scholar
16. Nicollian, E.H. and Goetzberger, A., J. Bell Syst. Tech., 46, 1055 (1967).Google Scholar