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Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

Published online by Cambridge University Press:  01 February 2011

Sung-Hoon Chung ,
Vladislav Vasilyev ,
Evgeni Gorokhov ,
Yong-Won Song  and
Hyuk-Kyoo Jang
Sung-Hoon Chung
Affiliation:
[email protected], Korea Polytechnic University, Department of Nano-Optics, Shiheung 429-793, Korea, Republic of
Vladislav Vasilyev
Affiliation:
[email protected], Korea polytechnic university, nano-optics engineering, 2121, Jeongwang-dong, Shiheung, 429-793, Korea, Republic of, 82-31-8041-0714, 82-31-8041-0729
Evgeni Gorokhov
Affiliation:
[email protected], Korea Polytechnic University, Department of Nano-Optics, Shiheung, 429-793, Korea, Republic of
Yong-Won Song
Affiliation:
[email protected], Korea Polytechnic University, Department of Nano-Optics, Shiheung, 429-793, Korea, Republic of
Hyuk-Kyoo Jang
Affiliation:
[email protected], Mecharonics Co., Ltd., R&D Center, Pyontaek, 459-020, Korea, Republic of
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Abstract

We investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

Keywords

atomic layer depositionRustructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B08-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 , Aaltonen, Alén, P., Ritala, M., Leskelä, M., Chem. Vap. Deposition, 9, 46 (2003).Google Scholar
2 Ritala, M., Leskelä, M., Nanotechnology, 10, 19 (1999).Google Scholar
3 Matsui, Y., Hiratani, M., Nabatame, T., Shimamoto, Y., Kimura, S., Electrochem. Solid-State Lett., 5, C18 (2002).Google Scholar
4 Smith, D. L., Thin-film deposition: principle & practice, Int’l ed. (McGraw-Hill, Singapore, 1995) p. 270.Google Scholar
5 Livingston, J. D., Electronic Properties of Engineering Materials: Mit Series in Materials Science and Engineering, (John Wiley & Sons, New York, 1998) chap. 1.Google Scholar
6 Oring, M., The Material Science of Thin Films, (Academic Press, San Diego, 1992) p. 456.Google Scholar
7 Hua, Y., Instrumentation Science & Technology, 32(2), 115 (2004).Google Scholar
8 Goldstein, J., Newbury, D., Joy, D., Lyman, C., Echlin, P., Lifshin, E., Sawyer, L., Michael, and J., Scanning Electron microscopy and X-ray microanalysis, 3rd. ed, (Kluwer Academic/Plenum Publishers, New York, 2003) chap.3.Google Scholar