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Electrical and Optical Properties of Vanadium in Omvpe-Grown GaAs

Published online by Cambridge University Press:  28 February 2011

W. S. Hobson ,
S. J. Pearton ,
V. Swaminathan ,
A. S. Jordan ,
Y. J. Kao ,
N. Mk Haegel  and
H. Kanber
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
V. Swaminathan
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
A. S. Jordan
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
Y. J. Kao
Affiliation:
UCLA, Los Angeles, CA 90024
N. Mk Haegel
Affiliation:
UCLA, Los Angeles, CA 90024
H. Kanber
Affiliation:
Hughes Aircraft Company, Torrance, CA 90505
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Abstract

The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2 H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec – 0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8 × 1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was > 4 × 1016 cm−3. The net carrier concentration profiles resulting from 29 si implantation into GaAs containing 1018 cm−3of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3intracenter emission at 0.65∼0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3only 2.5 × 1013 cm−3was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 125
Copyright
Copyright © Materials Research Society 1989

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