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Electrical and Optical Properties of CVT-grown ZnO Crystals

Published online by Cambridge University Press:  31 January 2011

Koji Abe  and
Masanori Oiwa
Koji Abe
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Nagoya, Japan
Masanori Oiwa
Affiliation:
[email protected], Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Nagoya, Japan
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Abstract

Effects of H2O partial pressure on ZnO crystal growth by chemical vapor transport (CVT) have been investigated. The use of H2O causes the increase in growth rate of ZnO, indicating that H2O acts as a dominant oxygen source in ZnO growth by CVT. The use of H2O also improves structural, electrical, and optical properties of the CVT-grown ZnO crystals. A sharp X-ray rocking curve for the ZnO (0002) reflection was obtained, and the full width at half maximum value was 38 arcsec. Strong near band edge emission was observed in photoluminescence spectra at room temperature. Both carrier concentration and Hall mobility increased with partial pressure of H2O. The dependence of the carrier concentration on temperature indicates that there exist two donors in the CVT-grown ZnO crystals. The estimated ionization energy for the shallow donor was 35±5 meV and that for the deep donor was 115±5 meV.

Keywords

crystal growthII-VIelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-16
Copyright
Copyright © Materials Research Society 2010

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