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Electrical and Optical PROPERTIES OF Co ALLOYED ß-FeSi2 Formed by Ion Beam Synthesis

Published online by Cambridge University Press:  22 February 2011

D. Panknin ,
W. Henrion ,
E. Wieser ,
M. Voelskow ,
W. Skorupa  and
H. Vöhse
D. Panknin
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
W. Henrion
Affiliation:
POB 510119, D-01314 Dresden, Germany
E. Wieser
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
M. Voelskow
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research
H. Vöhse
Affiliation:
Hahn-Meitner-Institute, Berlin, Institute Fresenius, Dresden
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Abstract

By subsequent implantation of iron and cobalt into silicon buried layers of semiconducting ß-(Fe1-xCo1-x)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the suicide layers is characterized by XTEM images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 723
Copyright
Copyright © Materials Research Society 1994

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References

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