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Electrical and Optical Properties of Co Alloyed β-FeSi2 Formed by Ion Beam Synthesis

Published online by Cambridge University Press:  03 September 2012

D. Panknin ,
W. Henrion ,
E. Wieser ,
M. Voelskow ,
W. Skorupa  and
H. Völise
D. Panknin
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, POB 510119, D–01314 Dresden, Germany
W. Henrion
Affiliation:
Hahn-Meitner-Institute, Berlin
E. Wieser
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, POB 510119, D–01314 Dresden, Germany
M. Voelskow
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, POB 510119, D–01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, POB 510119, D–01314 Dresden, Germany
H. Völise
Affiliation:
Institute Fresenius, Dresden
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Abstract

By subsequent implantation of iron and cobalt into silicon buried layers of semiconductinβ-(Fe1−xCox)Si2 are formed. The band gap energy as well as the spreading resistance decrease with increasing cobalt content. The microstructure of the sulicide layers is characterized by XTFM images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 197
Copyright
Copyright © Materials Research Society 1994

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References

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