Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-26T21:38:35.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

Published online by Cambridge University Press:  01 February 2011

Rob Armitage ,
Qing Yang ,
Henning Feick ,
Yeonjoon Park  and
Eicke R. Weber
Rob Armitage
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Qing Yang
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Henning Feick
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Yeonjoon Park
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Eicke R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Get access

Abstract

Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F1.2
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pearton, S.J., Zolper, J.C., Shul, R.J., and Ren, F., J. Appl. Phys. 86, 1 (1999)Google Scholar
2. Tang, H., Webb, J.B., Bardwell, J.A., Raymond, S., Salzman, J., and Uzan-Saguy, C., Appl. Phys. Lett. 78, 757 (2001)Google Scholar
3. Boguslawski, P. and Bernholc, J., Phys. Rev. B 56, 9496 (1997)Google Scholar
4. Neugebauer, J. and Walle, C. Van de, in Proceedings of the 22nd International Conference on the Physics of Semiconductors, p. 2327 (1995)Google Scholar
5. Fiorentini, F., Bernardini, F., Bosin, A., and Vanderbilt, D., in Proceedings of the 23rd International Conference on the Physics of Semiconductors, p. 2877 (1997)Google Scholar
6. Abernathy, C.R., MacKenzie, J.D., Pearton, S.J., and Hobson, W.S., Appl. Phys. Lett. 66, 1969 (1995)Google Scholar
7. As, D.J. and Kohler, U., J. Phys. Condens. Matter 13, 8923 (2001)Google Scholar
8. Sato, M., Appl. Phys. Lett 68, 935 (1996)Google Scholar
9. Shimizu, S. and Sonoda, S., in Proc.1st Int. Workshop on Nitride Semiconductors, p. 740 (2000)Google Scholar
10. Zhang, R. and Kuech, T.F., Mat. Res. Soc. Symp. Proc. 482, 709 (1998)Google Scholar
11. Birkle, U., Fehrer, M., Kirchner, V., Einfeldt, S., Hommel, D., Strauf, S., Michler, P., and Gutowski, J., MRS Internet J. Nitride Semicond. Res. 4S1, G5.6 (1999)Google Scholar
12. Ogino, T. and Aoki, M., Japan. J. Appl. Phys. 19, 2395 (1980)Google Scholar
13. Anders, A., Newman, N., Dickinson, M., Jones, E., Phatak, P., and Gassman, A., Rev. Sci. Instrum. 67, 905 (1996)Google Scholar
14. Yamamoto, T. and Katayama-Yoshida, H., Jpn. J. Appl. Phys. 36, L180 (1997)Google Scholar
15. Neugebauer, J. and Walle, C. Van de, Appl. Phys. Lett. 69, 503 (1996)Google Scholar