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Electrical and Optical Properties of Amorphous Si1-xSnx: H Structures

Published online by Cambridge University Press:  26 February 2011

D. Girginoudi ,
A. Thanailakis  and
A. Christou
D. Girginoudi
Affiliation:
Laboratory of Electrotechnical and Electronic Materials Technology, School of Engineering, Democritus University of Thrace, 67100 Xanthi, Greece
A. Thanailakis
Affiliation:
Laboratory of Electrotechnical and Electronic Materials Technology, School of Engineering, Democritus University of Thrace, 67100 Xanthi, Greece
A. Christou
Affiliation:
Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, DC 20375–5000
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Abstract

Amorphous hydrogenated silicon-tin films (α — Six Snx:H) have been prepared by co-electron beam and Knudsen cell deposition. It is shown that the dependence of Eg on x, over the entire range of 0 < x < 0.51 studied, cannot be described by a single linear relationship. The d.c. conductivity measurements indicate two distinct conduction regions as a function of x. The addition of Sn up to x = 0.10 creates a high density of dangling bonds and moves the band edges so a significant conductivity increase is observed. The bonding between Si and H is preferred to Sn and H. Sn-H bonds were observed only for x > 0.40. Photoluminescence measurements show that band edge luminescence dominates at 1.3–1.4 eV.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 603
Copyright
Copyright © Materials Research Society 1987

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References

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