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Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization

Published online by Cambridge University Press:  01 February 2011

Yordan Stefanov ,
Tino Ruland  and
Udo Schwalke
Yordan Stefanov
Affiliation:
Institute of Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany
Tino Ruland
Affiliation:
Institute of Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany
Udo Schwalke
Affiliation:
Institute of Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany
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Abstract

This article proposes a new application of tunneling current measurements Atomic Force Microscopy (AFM) for evaluation of silicon nitride stop-layer erosion in Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP). Simultaneous topographical and electrical AFM measurements allow a clear identification of ‘open’ silicon surfaces on nanometer scale by enhanced tunneling currents in those areas. The measurement technique is non-destructive and can be successfully implemented for process control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 838: Symposium O – Scanning Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials , 2004 , O10.5
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Smekalin, K., CMP dishing effects in shallow trench isolation, Solid State Society, July 1997 Google Scholar
2. Landis, H., Burke, P., Cote, W., Hill, W., Hoffman, C., Kaanta, C., Kobukger, C., Lange, W., Leach, M., Luce, S., Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing, Thin Solid Films, 220, 1992, 1–7 Google Scholar
3. Schlueter, J., Trench Warfare: CMP and Shallow Trench Isolation, Semiconductor International, October 1999 Google Scholar
4. Schwalke, U., Kerber, M., Koller, K., Jacobs, H., EXTIGATE: The Ultimate Progress Architecture for Submicron CMOS Technologies, IEEE Transactions on Electron Devices, Vol. 44, No. 11, November 1997 Google Scholar
5. Ali, L., Chatterjee, A., Joyner, K., Chen, I., Nonuniformity of field-oxide profiles in a CMP planarized STI process, CMP-MIC Conf. Proc., 249, 1996 Google Scholar
6. Heaton, M., Ge, L., Serry, F., Atomic Force Profilometry for Chemical Mechanical Polishing Metrology, Semiconductor FabTech, 11th Edition Google Scholar
7. DeWolf, P., Brazel, E., Pangon, N., Lefevre, M., ‘Tunneling AFM and Conductive AFM with Nanoscope AFMs’, Application Notes, VeecoGoogle Scholar
8. Steigerwald, J., Murarka, S., Gutmann, R., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, 1997, pp 155–164 Google Scholar