Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T15:27:06.117Z Has data issue: false hasContentIssue false
  • English
  • Français

Electric and Magnetic Transport in Ion-Beam Synthesised α-FeSi2

Published online by Cambridge University Press:  03 September 2012

K. Kyllesbech Larsen ,
M. Van Hove ,
A. Lauwers ,
K. Maex  and
M. Van Rossum
K. Kyllesbech Larsen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Hove
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

Measurements of the electrical resistivity and magnetoresistivity are reported for 100 nm buried α-FeSi2 in the temperature range 1.2 to 300 K, and in magnetic fields up to 5 Tesla.The metallic α-FeSi2 phase, formed by ion-beam synthesis and subsequent rapid-thermal annealing, is found to have a high residual resistivity of about 227 μΩ2 cm. Furthermore, a minimum in the electrical resistivity is found at 40 K. Combined with mnagnetore si stance measurements it is concluded that this minimum cannot be attributed to the Kondo effect, but is caused by weak localisation and spin-orbit interaction due to the very strong elastic scattering in the material. From the magnetoresistance measurements, at temperatures below 40 K, the relaxation times due to inelastic and spin-orbit scattering are deduced. The inelastic scattering rate is found to saturate below 4.2 K, and follow a T3 power law between 4.2 K to 40 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 121
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chen, L.J. and Tu, K.N., Mat. Sci. Rep. 6, 53 (1991).CrossRefGoogle Scholar
2. Kiinel, H. von, Mater. Sci. Rep. 8, 193 (1992).CrossRefGoogle Scholar
3. Maex, K., Mater. Sci. Rep. R 11, 53 (1993).Google Scholar
4. Hensel, J.C., Mat. Res. Soc. Symp. Proc. 54, 499 (1986).CrossRefGoogle Scholar
5. Nava, F., Tu, K.N., Thomas, O., Senateur, J. P., Mader, R., Borghesi, A., Guizzetti, G., Gottlieb, U., Laborde, O., and Bisi, O., Mater. Sci. Rep. 9, 141 (1993).CrossRefGoogle Scholar
6. Hirano, T. and Kaise, M., J. Appl. Phys. 68, 627 (1990).CrossRefGoogle Scholar
7. Matsui, H. and Oshima, T., J. Appl. Phys. 67 6368 (1990).CrossRefGoogle Scholar
8. Laborde, O., Thomas, O., Senateur, J.P., and Mader, R., J. Phys. F: Met. Phys. 16, 1745 (1986).CrossRefGoogle Scholar
9. Vandenabeele, P., and Maex, K., J. Vac. Sci. Technol. A9, 2784 (1991).CrossRefGoogle Scholar
10. Maex, K., Lauwers, A., Hove, M. Van, Vandervorst, W., and Rossum, M. Van, Mat. Res. Soc. Symp. Proc. 279, 869 (1993).CrossRefGoogle Scholar
11. Tavares, J., Bender, H., Lauwers, A., Maex, K., and Rossum, M. Van, Inst. Phys. Conf. Ser. 134, 181 (1993).Google Scholar
12. Blatt, F.J., Physics of Electronic Conduction in Solids, (McGraw-Hill, 1968).Google Scholar
13. Radermacher, K., Mantl, S., Gerthsen, D., Dieker, Ch., and Ltith, H., Nuci. Instr. Meth. B80/81, 831 (1993).CrossRefGoogle Scholar
14. To be published elsewhere.Google Scholar
15. Vries, J.W.C. de and Ommen, A.H. van, J. Appl. Phys. 64, 749 (1988).CrossRefGoogle Scholar
16. Onda, M., Sirringhaus, H., Steiner, P., and Kdnel, H. von, Mat. Res. Soc. Symp. Proc. 280 473 (1993).Google Scholar
17. Kondo, J., Solid State Physics, 3, 183 (1968).Google Scholar
18. Abrikosov, A.A., Fundamentals of the Theory of Metals, (North-Holland, 1988).Google Scholar
19. Alt'shuler, B.L., Aronov, A.G., Larkin, A.I., and Khmelnitskii, D.E., Soy. Phys. - JETP 54,265 (1981).Google Scholar
2 O. Alt'shuler, B.L. and Aronov, A.G. in Electron-Electron Interaction In Disordered Systems, ed. by Efros, A.L. and Pollak, M.. (Elsevier Science PubI., 1985).Google Scholar
21. Bergmann, G., Phys. Rep. 107, 1 (1984).CrossRefGoogle Scholar
22. Howson, M.A., and Gallagher, B.L., Phys. Rep. 170, 265 (1988).CrossRefGoogle Scholar
23. Larkin, A.I., JETP Lett. 31, 219 (1980).Google Scholar
24. Hickey, B.J., Greig, D., and Howson, M.A., Phys. Rev. B 36, 3074 (1987).CrossRefGoogle Scholar
25. DiTusa, J.F., Parpia, J.M., and Phillips, J.M., AplPhsLet 5742 (19)Google Scholar
26. Abrikosov, A. and Gorkov, L.P., Soy. Phys. JETP 15, 752 (1962).Google Scholar