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EL2 Related Anomalous Splitting in the Photoreflectance Response of Semi-Insulating GaAs

Published online by Cambridge University Press:  03 September 2012

C. Durbin ,
J. Estrera ,
R. Glosser ,
Walter Duncan ,
R.L. Henry ,
P. Nordquist ,
N. Bottka  and
D.K. Gaskill
C. Durbin
Affiliation:
Center for Applied Optics and Physics Program, University of Texas at Dallas, Richardson, TX 75083
J. Estrera
Affiliation:
Center for Applied Optics and Physics Program, University of Texas at Dallas, Richardson, TX 75083
R. Glosser
Affiliation:
Center for Applied Optics and Physics Program, University of Texas at Dallas, Richardson, TX 75083
Walter Duncan
Affiliation:
Central Research Laboratory, Texas Instruments Incorporated, Dallas, TX 75265
R.L. Henry
Affiliation:
Naval Research Laboratory, Washington, DC 20375
P. Nordquist
Affiliation:
Naval Research Laboratory, Washington, DC 20375
N. Bottka
Affiliation:
Naval Research Laboratory, Washington, DC 20375
D.K. Gaskill
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Anomalous splitting has been observed in the photoreflectance (PR) response of SI:GaAs in the vicinity of the exciton at 78 K. Recent photohiminescence (PL) measurements suggest the splitting is correlated with the EL2 content of the samples. Separation between the two peaks in PR measurements range from about 2 to 4 meV. A striking effect is that each peak is maximized by a different phase setting of the lock-in. The splitting is sample dependent and is also affected by several other factors including surface conditions, temperature, pump beam intensity and modulation frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 289
Copyright
Copyright © Materials Research Society 1992

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References

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