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Einstein Rzlation in Quantum Wires of Tetragonal Sediconduc Tors

Published online by Cambridge University Press:  28 February 2011

Kamakhya P. Ghatak ,
B. De ,
M. Mondal  and
S. N. Biswas
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, University of Jadavpur, Calcutta-700032, INDIA
B. De
Affiliation:
13 Little Brook Road, CT- 06820, DARIEN, U. S. A.
M. Mondal
Affiliation:
Departnent of Physics, Y.S.Palpara College, P.O.Box. 721458, Midnapore, West Bengal, INDIA
S. N. Biswas
Affiliation:
Department of 3lectronics and Telecommunication Engineering, B.E.College, Shibpur, Howrah-711103, West Bengal, INDIA
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Abstract

We have studied the Einstein relation for the diffusivity. mobility ratio (7PT) on the basis of a newly derived electron energy spectrum in QW f tetragonal semiconductors, within the framework of K. P method by considering all types of anisotropies of the energy band parameters. It is found, taking n-Cd3 As2 as an example that the DUTZ increases with electron concentration and decreases with film thickness in an oscillatory manner respectively. The theoretical results are in good aoreement with the suggested experimental method of determining the DMR in degenerate semiconductors having arbitrary dispersion law.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 333
Copyright
Copyright © Materials Research Society 1990

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References

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