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The Einstein Relation in Superlattices OP Wide-Band Gap Semiconductors Onder Cross-Field Configuration

Published online by Cambridge University Press:  25 February 2011

Kamakhya P. Ghatak  and
Badal De
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta 700032, India.
Badal De
Affiliation:
John Brown E and C inc., 333 Ludlow Street, P.O. 142 2, Connecticut 06902, USA.
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Abstract

in this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 377
Copyright
Copyright © Materials Research Society 1992

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References

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