Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:31:02.546Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Various Passivation Dielectrics and Via Reservoir Lengths on Stress and Electromigration Reliability of Metal Interconnects

Published online by Cambridge University Press:  21 March 2011

Young-Bae Park ,
Young-Ah Cho  and
Won-Gyu Lee
Young-Bae Park
Affiliation:
System IC R & D Center, Hynix semiconductor Inc., Cheongju, 360-480, Korea
Young-Ah Cho
Affiliation:
System IC R & D Center, Hynix semiconductor Inc., Cheongju, 360-480, Korea
Won-Gyu Lee
Affiliation:
System IC R & D Center, Hynix semiconductor Inc., Cheongju, 360-480, Korea
Get access

Abstract

Reservoir length dependencies of electromigration lifetime in multilevel interconnect were compared for two passivation dielectrics, that is, FOX (Flowable Oxide) and HDP FSG (High Density Plasma Fluorinated Silicate Glass). The higher electromigration resistance of interconnects passivated by FOX can be best explained by their lower stress and vacancy concentration levels than the case for FSG. It was also proposed that lower levels of stress and vacancy concentration in the longer reservoir could partially contribute to the better electromigration reliability of interconnect with the longer reservoir.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L6.24.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kakuhara, Y. and Chikaki, S., Proc. Stress Induced Phenomena in Metallization (Tokyo, Japan: AIP, 1998), pp. 89.Google Scholar
2. Shingubara, S., Osaka, T., Abdeslam, S., Sakue, H., and Takahagi, T., Proc. Stress Induced Phenomena in Metallization (Tokyo, Japan: AIP, 1998), pp. 159.Google Scholar
3. Clemens, B. M. and Bain, J. A., MRS Bulletin July, 46 (1992).Google Scholar
4. Cornella, G., Lee, S. H., Nix, W. D., and Bravman, J. C., Appl. Phys. Lett. 71, 2949 (1997).Google Scholar
5. ABAQUS User's Manual, Ver. 6.0, Hibbit, Karlson and Sorensen, Inc., Pawtucket, RI (1999).Google Scholar
6. Park, Y. B., Jeon, I. S., and Lee, W. G., submitted to J. Elec. Mater. (2002).Google Scholar
7. Shi, L. T. and Tu, K. N., J. Appl. Phys. 77, 3037 (1995).Google Scholar
8. Sarychev, M. E., Zhitnikov, Y. V., Borucki, L., Liu, C. L., and Makhviladze, T. M., J. Appl. Phys. 86, 3068 (1999).Google Scholar