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Effects of Thin Interposing Layers on The Epitaxial Growth of FeSi'2 on Silicon

Published online by Cambridge University Press:  26 February 2011

H. C. Cheng ,
T. R. Yew  and
L. J. Chen
H. C. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
T. R. Yew
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
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Abstract

Thin interposing Ni or Co layers between Fe thin films and Si have been shown to be very effective in inducing the growth and improving the quality of epitaxial FeSi2 on silicon. The formation of a transition layer with graded concentration is conceived to facilitate the epitaxial growth of FeSi2 on silicon. The thin interposing layer scheme may be extended to promote the epitaxial growth of a number of refractory suicides on silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 279
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.

+

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

References

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