Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T09:18:58.584Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

Tadamasa Kimura ,
Hiroyuki Yamaguchi ,
Shigemi Yugo  and
Yoshio Adachi
Tadamasa Kimura
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Hiroyuki Yamaguchi
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Shigemi Yugo
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Yoshio Adachi
Affiliation:
University of Electro-Communications, 1-5-1 Chofugaoka, Chofushi, Tokyo 182, Japan
Get access

Abstract

The β-SiC formation process through post-implantation annealing of Si-C mixtures fabricated on Si by C-ion implantation at room temperature is studied by means of infrared absorption spectroscopy. It is shown that the formation of B-SiC from the Si-C mixtures is greatly enhanced by the subsequent irradiation of other energetic ions prior to the thermal annealing. The continuous amorphization of the Si-C mixed layers is considered to be the dominant cause for the enhancement of the B-SiC formation. The activation energy of the β-SiC formation process which is 5.3 eV without irradiation is reduced to 4.0 eV by the irradiation of 150 keV, 1 × 1017/cm2 Ar ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 289
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Borders, J.A., Picraux, S.T. and Beezhold, W.: Appl. Phys. Lett. 1A (1971) 509 I.P. Akimchenko, Kh.R. Kazdaev and V.V. Krasnopevtsev: Sov. Phys. Semicond. 11 (1977) 1149 T. Kimura, S. Kagiyama and S. Yugo: Thin Solid Films 81 (1981) 319Google Scholar
[2] Kimura, T., Kagiyama, S., Kawamura, A., Yugo, S. and Adachi, Y.: Jpn. J. Appl. Phys. 24 (1985) 1712 T. Kimura, H. Yamaguchi, Luo Ji-Kui, S. Yugo and Y. Adachi: to be submittedGoogle Scholar
[3] Gibbons, J.F., Johnson, W.S. and Mylroie, S.W.: Projected Range Statics, Semiconductor and Semimetals 2nd Edition (Dowden Hutchinson and Ross, Inc., Stroundsburg, Pennsylvania, 1975)Google Scholar
[4] Davidson, S.M.: Proc. European Conf. on Ion Implantation, Reading (Peter Peregrinus Ltd., Stevenage, 1970) p. 238Google Scholar
[5] Poate, J.M. and Williams, J.S.: Ion Implantation and Beam Processing ed. by Williams, J.S. and Poate, J.M. (Academic Press Australia, 1984) p.13 Google Scholar