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Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by RF-MBE

Published online by Cambridge University Press:  01 February 2011

Daisuke Muto ,
Ryotaro Yoneda ,
Hiroyuki Naoi ,
Masahito Kurouchi ,
Tsutomu Araki  and
Yasushi Nanishi
Daisuke Muto
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Ryotaro Yoneda
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Hiroyuki Naoi
Affiliation:
Center for Promotion of the COE Program, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Masahito Kurouchi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Tsutomu Araki
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
Yasushi Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga 525–8577, Japan
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Abstract

The effects of the nitridation process of (0001) sapphire on crystalline quality of InN were clearly demonstrated. The InN films were grown on NFM (nitrogen flux modulation) HT-InN or LT-InN buffer layers, which had been deposited on nitridated sapphire substrates. We found that low-temperature nitridation of sapphire is effective in improving the tilt distribution of InN films. Whereas the twist distribution remained narrow and almost constant, independent of nitridation conditions, when LT-InN buffer layers were used. The XRC-FWHM value of 54 arcsec for (0002) InN, the lowest reported to date, was achieved by using the LT-InN buffer layer and sapphire nitridation at 300°C for 3 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E4.2
Copyright
Copyright © Materials Research Society 2005

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References

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