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Effects of the Dislocation Density and Surface Energy on Phase Diagrams of the S-K Growth Mode for the GaInN/GaN and GaPSb/GaP Systems

Published online by Cambridge University Press:  10 February 2011

K. Nakajima ,
T. Ujihara ,
S. Miyashita  and
G. Sazaki
K. Nakajima
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, [email protected] jp
T. Ujihara
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, [email protected] jp
S. Miyashita
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, [email protected] jp
G. Sazaki
Affiliation:
Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, JAPAN, [email protected] jp
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Abstract

The growth of thin films has been categorized into three types namely the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode, and the Volmer-Weber (VW) mode. The strain, surface, and interfacial energies were calculated for the three types of growth mode of the GaInN/GaN and GaPSb/GaP systems by considering the effects of the dislocation density and reconstruction of dangling bonds. The phase diagrams of the growth modes were determined for the GaInN/GaN and GaPSb/GaP systems. In the GaInN/GaN system, the VW mode appears in the most region of the phase diagram. The region of the VW mode becomes smaller as the dislocation density increases. In the GaPSb/GaP system, the SK and VW modes appear and the region of these modes becomes larger as the reconstruction ratio increases

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 285
Copyright
Copyright © Materials Research Society 2000

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References

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