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The Effects of Texture and Doping on The Young's Modulus of Polysilicon

Published online by Cambridge University Press:  10 February 2011

Sangwoo Lee ,
Changho Cho ,
Jongpal Kim ,
Sangjun Park ,
Sangwoo Yi ,
Jongjun Kim  and
Dong-Il Dan Cho
Sangwoo Lee
Affiliation:
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea, [email protected]
Changho Cho
Affiliation:
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea, [email protected]
Jongpal Kim
Affiliation:
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea, [email protected]
Sangjun Park
Affiliation:
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea, [email protected]
Sangwoo Yi
Affiliation:
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea, [email protected]
Jongjun Kim
Affiliation:
Department of Electronic Engineering, Kon-kuk University, 93-1, Mojin-dong, Kwangjin-gu, Seoul 143-701, Korea and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Dong-Il Dan Cho
Affiliation:
School of Electrical Engineering and Inter-university Semiconductor Research Center, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea, [email protected]
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Abstract

Polysilicon films deposited by low pressure chemical deposition (LPCVD) are the most widely used structural material for microelectromechanical systems (MEMS). However, the structural properties of LPCVD polysilicon films are known to vary significantly, depending on deposition conditions as well as post-deposition processes. This paper investigates the effects of phosphorus doping and texture on Young's modulus of polysilicon films. Polysilicon films are depostied at 585°C, 605"C, and 625°C to a thickness of 2µm. Specimens with varying phosphorus doping levels are prepared by diffusion doping at various temperatures and times using both POCl3 and phosphorsilicate glass (PSG) as the source. Texture is measured using an X-ray diffractometer. Young's modulus is calculated by taking the average of the values calculated from the resonant frequencies of four-different size lateral resonators. Our results show that Young's modulus of diffusion doped polysilicon films decreases with increasing doping concentration, and increases with increasing <111> texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 518: Symposium N – Microelectromechanical Structures for Materials Research , 1998 , 21
Copyright
Copyright © Materials Research Society 1998

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