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Effects of Temperature and Charge Depletion on the Spin Density in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

J.-K. Lee  and
E. A. Schiff
J.-K. Lee
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 18244–1130
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 18244–1130
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Abstract

The dependence of the spin density upon temperature and charge depletion is calculated based on the standard defect model in a-Si:H of a D-center with positive, neutral, and negative charge states. The results are compared with recent measurements of depletion width modulated spin densities and temperature-dependent spin densities. It is shown that the initial charge density assumed for the defect system substantially affects conclusions regarding electronic correlation energies drawn from the measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 605
Copyright
Copyright © Materials Research Society 1991

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References

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