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Effects of Surface and Bulk Defects in InP

Published online by Cambridge University Press:  26 February 2011

C. Warren ,
K. Reinhardt ,
A. Singh ,
Y. S. Lee  and
W. A. Anderson
C. Warren
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
K. Reinhardt
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
A. Singh
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
Y. S. Lee
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, 217C Bonner Hall, Amherst, NY 14260
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Abstract

Undoped, n-type InP has been studied utilizing Au-oxide- InP metal-insulator-semiconductor (MIS) structures. Processing variations have included oxide growth techniques, and annealing of grown oxides. Annealing of the devices in N2 or N2 :H2 after oxide formation has reduced reverse saturation current density by up to a factor of 10 and increased barrier height from 0.45 to 0.65 eV. Annealing of the oxide increases refractive index due possibly to a densification or changed chemical structure. ESCA data reveals thin native oxides to be InP04 whereas thermally grown ones also contain P2 05 and In2 03. DLTS data reveals a dominant defect 597 meV below the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 491
Copyright
Copyright © Materials Research Society 1988

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References

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