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Effects of Supercritical CO2 Drying and Photoresist Strip on Low-k Films

Published online by Cambridge University Press:  01 February 2011

R.F. Reidy ,
Zhengping Zhang ,
R.A. Orozco-Teran ,
B.P. Gorman  and
D.W. Mueller
R.F. Reidy
Affiliation:
Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203-5310
Zhengping Zhang
Affiliation:
Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203-5310
R.A. Orozco-Teran
Affiliation:
Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203-5310
B.P. Gorman
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203-5308
D.W. Mueller
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203-5308
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Abstract

Future interlayer dielectric (ILD) requirements necessitate reductions in dielectric constant to 2.1 within four years. Due to gaseous-like transport properties and near liquid-like densities, supercritical methods have been developed to dry and strip resist from these highly porous materials. Although a non-polar molecule, the solvating capability of supercritical CO2 (SCCO2) can be tailored by varying pressure, temperature, and co-solvents. This flexibility has been employed to remove photoresist and moisture from porous low-k films. The results of these experiments have been characterized using FTIR, ellipsometry, and SEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E8.20
Copyright
Copyright © Materials Research Society 2003

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