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Effects of Substrate Parameters on Amorphous-Crystalline Silicon Interface

Published online by Cambridge University Press:  21 February 2011

U. Besi Vetrella  and
J. D. Cohen
U. Besi Vetrella
Affiliation:
ENEA-CRIF, 80055 Portici (NA), ITALY
J. D. Cohen
Affiliation:
University of Oregon, Department of Physics, Eugene, OR 97403, USA
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Abstract

Capacitance vs. temperature, deep-level transient spectroscopy (DLTS), and transient photocapacitance spectroscopy have been used to investigate the amorphous-crystalline silicon interface region of a device made of hydrogenated amorphous silicon deposited on a lightly doped n-type crystalline silicon.

By comparing our results between substrates with and without oxide contamination with those in a earlier study, we have been able to correlate the effects of substrate preparation on the density of interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 819
Copyright
Copyright © Materials Research Society 1991

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References

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