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Effects of Structural Defects on Diode Properties in 4H-SiC

Published online by Cambridge University Press:  11 February 2011

B. J. Skromme ,
K. C. Palle ,
M. K. Mikhov ,
H. Meidia ,
S. Mahajan ,
X. R. Huang ,
W. M. Vetter ,
M. Dudley ,
K. Moore  and
S. Smith
...Show all authors
B. J. Skromme
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
K. C. Palle
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
M. K. Mikhov
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–5706, U.S.A.
H. Meidia
Affiliation:
Department of Chemical and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–6006, U.S.A.
S. Mahajan
Affiliation:
Department of Chemical and Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ, 85287–6006, U.S.A.
X. R. Huang
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony, Brook, Stony Brook, NY, 11794–2275, U.S.A.
W. M. Vetter
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony, Brook, Stony Brook, NY, 11794–2275, U.S.A.
M. Dudley
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony, Brook, Stony Brook, NY, 11794–2275, U.S.A.
K. Moore
Affiliation:
Physical Sciences Research Laboratory, Motorola, Inc., Tempe, AZ, 85284, U.S.A.
S. Smith
Affiliation:
Physical Sciences Research Laboratory, Motorola, Inc., Tempe, AZ, 85284, U.S.A.
T. Gehoski
Affiliation:
Physical Sciences Research Laboratory, Motorola, Inc., Tempe, AZ, 85284, U.S.A.
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Abstract

The influence of two types of structural defects on Schottky diodes in 4H-SiC is investigated. First, a structural transformation that takes place during oxidation or annealing of heavily n-doped wafers is studied using X-ray diffraction, high resolution TEM, secondary electron imaging (SEI), photoluminescence, and electrical measurements on Schottky diodes. Lamellae of 3C SiC with six bilayers are introduced primarily in the heavily doped substrates, and to a lesser extent in the lightly doped epilayers. Lowered Schottky barrier heights result and are spatially correlated to the 3C phase. The 3C lamellae exhibit charge contrast in SEI images where they intersect the surface. Second, we study isolated screw dislocations and show preliminary evidence that they are not the main factor controlling Schottky barrier height and ideality in Schottky diodes in lower-doped 4H-SiC wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.4
Copyright
Copyright © Materials Research Society 2003

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References

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