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Effects of Si Implantation on Sb Diffusion In Sb-Silica Spin-On Layers

Published online by Cambridge University Press:  22 February 2011

N. Moriya ,
R. Kalish ,
P. Brener  and
V. Richter
N. Moriya
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
R. Kalish
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
P. Brener
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
V. Richter
Affiliation:
Physics Department and Solid State Institute, Technion, Israel Institute of Technology Haifa 32000, ISRAEL.
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Abstract

The effects of Si implantation (2×1015 · cm-2) on the diffusion of Sb in Sb doped silica (SiO2) spin-on layers and on their hardness were studied. RBS analysis and AES depth profiling showed that the implantation greatly retarded the Sb diffusion (1000–1200°C, 10 sec) in the oxide layer. Hence the high level of Sb near the SiO2/Si interface, which is clearly seen for the unimplanted part of the sample was not noticible in the non implanted part. AES depth profile measurements also showed that the deposited oxide layers were more sputter resistant as a result of the implantation. The above observations are related to the ion induced radiation damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 97
Copyright
Copyright © Materials Research Society 1988

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