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The Effects of Selectively Absorbing Dielectric Layers and Beam Shaping on Recrystallization and Fet Characteristics in Laser Recrystallized Silicon on Amorphous Substrates

Published online by Cambridge University Press:  15 February 2011

G. E. Possin ,
H. G. Parks ,
S. W. Chiang  and
Y. S. Liu
G. E. Possin
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
H. G. Parks
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
S. W. Chiang
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
Y. S. Liu
Affiliation:
General Electric Research and Development Cente Schenectady, New York 12301
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Abstract

Selective absorption, using patterned dielectric films, and beam shaping were used as means for improving the recrystallization of LPCVD polysilicon islands on fused quartz. IR imaging of the laser heated region was used to optimize and control the recrystallization. MOSFETs were fabricated in laser-recrystallized silicon islands on amorphous substrates using a standard n-channel poly-gate process. Devices with various channel lengths and widths were fabricated, and the dependence of threshold voltage, channel mobility, and leakage on recrystallization conditions and device dimensions was studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 549
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

present address, IBM, East Fishkill

References

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