Published online by Cambridge University Press: 15 February 2011
Selective absorption, using patterned dielectric films, and beam shaping were used as means for improving the recrystallization of LPCVD polysilicon islands on fused quartz. IR imaging of the laser heated region was used to optimize and control the recrystallization. MOSFETs were fabricated in laser-recrystallized silicon islands on amorphous substrates using a standard n-channel poly-gate process. Devices with various channel lengths and widths were fabricated, and the dependence of threshold voltage, channel mobility, and leakage on recrystallization conditions and device dimensions was studied.
present address, IBM, East Fishkill