Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T18:03:51.390Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Reactive Ion Etching on Phonon-Electron Interactions in Inalas-Ingaas Modulation-Doped Field-Effect Transistor Structures Studied by Raman Scattering

Published online by Cambridge University Press:  21 February 2011

J.E. Maslar ,
J.F. Dorsten ,
P.W. Bohn ,
S. Agarwala ,
I. Adesidat ,
C. Caneau  and
R. Bhat
J.E. Maslar
Affiliation:
Department of Chemistry, University of Illinois, Urbana, IL 61801
J.F. Dorsten
Affiliation:
Department of Chemistry, University of Illinois, Urbana, IL 61801
P.W. Bohn
Affiliation:
Department of Chemistry, University of Illinois, Urbana, IL 61801
S. Agarwala
Affiliation:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana, IL 61801
I. Adesidat
Affiliation:
Center for Compound Semiconductor Microelectronics, University of Illinois, Urbana, IL 61801
C. Caneau
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
R. Bhat
Affiliation:
Bell Communications Research, Red Bank, New Jersey 07701
Get access

Abstract

Raman Scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.52Al0.48As-In0.53Ga0.47As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified for the first time in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily-doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths. In addition HBr-based reactive ion etching has been performed on these structures, and the effects have been correlated with etch time and bias voltage for structures with different cap layer thicknesses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 377
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Agarwala, S., Adesida, I., Caneau, C., and Bhat, R., Appl. Phys. Lett. 62, 2830 (1993).Google Scholar
2 Pearton, S.J., Chakrabarti, U.K., Lane, E., Perley, A.P., Abernathy, C.R., Hobson, W.S., and Jones, K.S., J. Electrochem. Soc. 139, 856 (1992).Google Scholar
3 Burstein, E., Pinczuk, A., and Buchner, S., Physics of Semiconductors 1978, B.L.H. Wilson, Ed. London: The Institute of Physics, 1979, p. 1231.Google Scholar
4 Pinczuk, A. and Abstreiter, G., Spectroscopy of Free Carrier Excitations in Semiconductor Quantum Wells, Light Scattering in Solids V, Cardona, M. and Güntherodt, G., Eds., (Springer- Verlag, Berlin, 1989) p. 153.Google Scholar
5 Mowbray, D.J., Hayes, W., Taylor, L.L., and Bass, S.J., Semicond. Sci. Technol. 5, 83 (1990).Google Scholar
6 Mowbray, D.J., Hayes, W., Bland, J.A.C., and Skolnick, M., and S.J. Bass, Semicond. Sci. Technol. 2, 822 (1987).Google Scholar
7 Nguyen, L.D., Brown, A.S., Thompson, M.A., and Jelloian, L.M., IEEE Trans. Electron Devices 39, 2007 (1992).Google Scholar
8 Nash, K.J., Skolnick, M.S., and Bass, S.J., Semicond. Sci. Technol. 2, 329 (1987).Google Scholar
9 Maslar, J.E., Dorsten, J.F., Bohn, P.W., Agarwala, S., Adesida, I., Caneau, C., and Bhat, R., Appl. Phys. Lett. 63, 1909 (1993).Google Scholar