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Effects of Potassium on the Adsorption and Reactions of Nitric Oxide on Silicon Surface

Published online by Cambridge University Press:  25 February 2011

Z. C. Ying  and
W. Ho
Z. C. Ying
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center Cornell University, Ithaca, New York, 14853
W. Ho
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center Cornell University, Ithaca, New York, 14853
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Abstract

The adsorption, thermoreactions, and photoreactions of NO coadsorbed with K on Si(111)7×7 at 90 K have been studied and compared with the results obtained from the Kfree surface. The experiments were performed under ultra-high vacuum conditions using high resolution electron energy loss spectroscopy, work function change measurements, and mass spectrometry. NO adsorbs both molecularly and dissociatively on the K-free surface. Two molecular N–O stretching modes are observed at 188 and 225 meV. The concentration of these NO molecules on the surface decreases as the K exposure increases and vanishes at high K exposures. A new N–O stretching mode, attributed to adsorption of NO molecules on K clusters, is observed at 157 meV. After thermal heating or photon irradiation, the surface is covered with atomic O and N. The surface is more oxidized in the presence of K. A steady decrease in the photodesorption cross section is observed as the K exposure increases and is attributed to K-induced band structure changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 209
Copyright
Copyright © Materials Research Society 1989

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References

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