Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T09:10:37.582Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Plastic Deformation on Charge Transport in Mercuric Iodide Radiation Detectors

Published online by Cambridge University Press:  26 February 2011

J. Marschall ,
F. Milstein ,
G. Georgeson  and
V. Gerrish
J. Marschall
Affiliation:
Departments of Materials and Mechanical Engineering, University of California, Santa Barbara, CA 93106
F. Milstein
Affiliation:
Departments of Materials and Mechanical Engineering, University of California, Santa Barbara, CA 93106
G. Georgeson
Affiliation:
Boeing Aerospace, Defense and Space Group, Seattle, WA 98124–2499
V. Gerrish
Affiliation:
EG&G Energy Measurements, Inc., Santa Barbara Operations, Goleta, CA 93117
Get access

Abstract

The effects of bulk plastic deformation of mercuric iodide (HgI2), upon electronic properties which are relevant to the performance of HgI2 as a radiation detector, were examined experimentally. Hole lifetimes, as well as hole and electron mobilities, were measured at various stages of sample deformation. Hole lifetimes decreased by a factor of 2 under strains of several percent; carrier mobilities did not change significantly, except during creep loading where electron and hole mobilities decreased by about 65% and 25%, respectively. Additionally, dark current measurements were made on specimens with varying degrees of accumulated plastic strain; dark current values did not strongly reflect the extent of plastic damage in deformed specimens.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 351
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schieber, M., Schnepple, W. F., and Berg, L. van den, J. Crystal Growth 33, 125 (1976).Google Scholar
2. James, T. W. and Milstein, F., J. Mater. Sci. 18, 3249 (1983).Google Scholar
3. Randtke, P. T. and Ortale, C., IEEE Trans. Nucl. Sci. NS–24, 129 (1977).Google Scholar
4. James, T. W. and Milstein, F., J. Mater. Sci. 16, 1167 (1981).Google Scholar
5. Milstein, F., Farber, B., Kim, K., Berg, L. van den, and Schnepple, W. F., Nucl. Instrum. Meth. 213, 65 (1983).Google Scholar
6. Gits, S. and Authier, A., J. Crystal Growth 58, 473 (1982).Google Scholar
7. Gits, S., Nucl. Instr-um. Meth. 213, 43 (1983).Google Scholar
8. Georgeson, G. and Milstein, F., J. Mater. Sci. 23, 3792 (1988).Google Scholar
9. Georgeson, G. and Milstein, F., Nucl. Instrum. Meth. A285, 488 (1989).Google Scholar
10. James, T. W. and Milstein, F., Appl. Phys. Lett. 52, 538 (1988).Google Scholar
11. Milstein, F., James, T. W., and Georgeson, G., Nucl. Instrum. Meth. A285, 500 (1989).Google Scholar
12. Gerrish, V. and Berg, L. van den, Nucl. Instrum. Meth A299, 41 (1990).Google Scholar
13. Georgeson, G. and Milstein, F., Nucl. Instrum. Meth. A285, 507 (1989).Google Scholar
14. Marschall, J. and Milstein, F., Appl. Phys. Lett. 58, (in press).Google Scholar
15. Labusch, R. and Schröter, W., in “Dislocations in Solids”, edited by Nabarro, F. R. N. (North-Holland Publishing Company, New York, 1980), Vol.5, p. 127.Google Scholar
16. Shaw, D., in “Atomic Diffusion in Semiconductors”, edited by Shaw, D. (Plenum Publishing Corporation, New York, 1973), pp. 46–48; S. M. Hu, Dislocations in Solids, pp.314-315.Google Scholar
17. Mellet, J. and Friant, A., Nucl. Instrum. Meth. A283, 199 (1989).Google Scholar
18. Gerrish, V., Internal EG&G Memos (5/15/1990 & 8/29/1990).Google Scholar
19. Beyerle, A., Hull, K., Markakis, J., Schnepple, W., and Berg, L. van den, Mat. Res. Soc. Symp. Proc. 16, 191 (1983).Google Scholar