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The Effects of P2S5 Surface Passivation on Dry Etched GaAs

Published online by Cambridge University Press:  25 February 2011

O.J. Glembocki ,
J.A. Dagata ,
E.A. Dobisz  and
D.S. Katzer
O.J. Glembocki
Affiliation:
Naval Research Laboratory, Code 6864, Washington, DC 20375
J.A. Dagata
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899.
E.A. Dobisz
Affiliation:
Naval Research Laboratory, Code 6864, Washington, DC 20375
D.S. Katzer
Affiliation:
Naval Research Laboratory, Code 6864, Washington, DC 20375
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Abstract

The effects of P2S5 surface passivation treatments on damage caused by chemically assisted ion beam (CAIBE) etching of GaAs have been examined using ex-situ photoreflectance. Epitaxially grown undoped GaAs on heavily doped GaAs substrates were used to determine surface electric fields. The etching process is observed to decrease surface electric fields, produce subsurface damage and to reduce surface photovoltages. Post-etching treatments with P2S5 are observed to increase surface photovoltages, but have no significant effect on the surface fields or subsurface damage. That the surface field is unaffected suggests that in etched materials the Fermi level pinning is not solely determined by the surface and that the near surface regions are important. We also find that samples pretreated with P2S5 exhibit more etch damage than those which are only degreased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 217
Copyright
Copyright © Materials Research Society 1992

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References

1. Pang, S.W., Lincoln, G.A., McClelland, R.W., Degraff, P.D., Geis, M.W. and Piacenti, W.J., J. Vac. Sci. Technol. BI, 1334 (1983).CrossRefGoogle Scholar
2. Glembocki, O.J. and Dobisz, E.A., J. Vac. Sci. Technol. B9, 1403 (1991).Google Scholar
3. Dagata, J.A., Tseng, W., Bennett, J., Schneir, J. and Harary, H.H., Appl. Phys. Lett., 59, xxxx(1991); in press, J. Ultramicroscopy, May 1992.CrossRefGoogle Scholar
4. Hoof, C. Van, Deneffe, K., DeBoeck, J., Arnet, D.J. and Borghs, G., Appl. Phys. Lett., 54, 608(1989).CrossRefGoogle Scholar
5. Glembocki, O.J., Shanabrook, B.V., Bottka, N., Beard, W.T. and Comas, J., Appl. Phys. Lett. 46, 970(1985).Google Scholar
6. Aspnes, D.E., Phys. Rev. 153, 972(1967) and R.A. Forman, D.E. Aspnes and M. Cardona, J. Phys. Chem. Sol. 31, 227(1970).Google Scholar
7. Aspnes, D.E. and Studna, A. A., Phys. Rev. B7, 4605(1973).Google Scholar
8. Yin, X., Chen, H.M., Pollak, F.H., Cao, Y., Montano, P.A., Kirchner, P.D., Pattit, G.D. and Woodall, J.M., J. Vac. Sci. Technol. B9, 2114 (1991).Google Scholar
9. Miller, D.A.B., Chemla, D.S., Eilenberger, D.J., Smith, P.W., Gossard, A.C. and Tsang, W.T., Appl. Phys. Lett. 41, 679(1981) and O.J. Glembocki, B.V. Shanabrook and W.T. Beard, Surf, Sci. 174, 206(1986).Google Scholar