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Effects of Oxygen-doping on Crystallization and Physical Properties of Ge2Sb2Te5 Films

Published online by Cambridge University Press:  01 February 2011

Yu-Hsung Perng ,
Ying-Tai Hsu  and
Lih-Hsin Chou
Yu-Hsung Perng
Affiliation:
[email protected], Nartional Tsing Hua University, Hsinchu, 30013, Taiwan
Ying-Tai Hsu
Affiliation:
[email protected], Nartional Tsing Hua University, Hsinchu, 30013, Taiwan
Lih-Hsin Chou
Affiliation:
[email protected], Nartional Tsing Hua University, Hsinchu, 30013, Taiwan
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Abstract

Oxygen-doped Ge2Sb2Te5 films (denoted as Ge2Sb2Te5-O) with oxygen concentration in between 0 and 10.3 at. % were prepared by direct current magnetron reactive sputtering with Ge2Sb2Te5 target. Both the crystallization temperature and activation energy of Ge2Sb2Te5-O films increased, while the crystalline grain size refined with oxygen concentration. For both amorphous and crystalline phases, optical band gap Egopt increases with oxygen concentration – a similar trend as observed in resistivity measurements. X-ray diffraction results showed that the face center cubic (fcc) structure maintained even after 400°C anneal with oxygen addition in between 7.5 − 8.3 at.% - a different phenomenon from undoped Ge2Sb2Te5 film, but with crystallinity diminished gradually with oxygen concentration. Only Sb2Te3 diffraction peak was observed in the 10.3 at.% O film after 400°C anneal. In conjunction with the bonding information obtained from X-ray photoelectron spectroscopy (XPS), effects of oxygen on the microstructures, thermal properties, resistivity and stability of fcc structure are examined and the embedded mechanisms are discussed in this study.

Keywords

memorydopantmicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G03-13
Copyright
Copyright © Materials Research Society 2008

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