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The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System

Published online by Cambridge University Press:  15 February 2011

J. M. Gibson ,
J. C. Bean ,
J. M. Poate  and
R. T. Tung
J. M. Gibson
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974 (U.S.A.)
J. C. Bean
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974 (U.S.A.)
J. M. Poate
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974 (U.S.A.)
R. T. Tung
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974 (U.S.A.)
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Extract

The epitaxial perfection and microstructure in thin CoSi2 (111) (and NiSi2) films on silicon has been examined using transmission electron microscopy, including high resolution cross section techniques. We find that, under ultrahigh vacuum preparation conditions only, genuine single-crystal epitaxy can occur for bothreacted and codeposited CoSi2 films. A unique interfacial defect structure is associated with this epitaxy, in which the silicide films are rotated through 180° about (111) with respect to the silicon substrates. Under less than perfectly clean conditions epitaxial perfection is never obtained for CoSi2. Moreover such perfection has never been attained under any conditions for NiSi2 on Si(111). By studying the evolution of epitaxy and defect structure in thin and thick films we have proposed a model to explain the unique quality of ultrahigh vacuum CoSi2 films. The model invokes a defect pinning mechanism to explain the dominance of the 180°-rotated epitaxy during silicide growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 101
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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