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Effects of Nitrogen on Formation and Properties of Diamondlike Films Synthesized by Dual Ion Beam Deposition

Published online by Cambridge University Press:  22 February 2011

Xiaoming He
Affiliation:
Tsinghua University, Dept. of Materials Science and Engineering, Beijing, 100084, China
Hongwei Song
Affiliation:
Tsinghua University, Dept. of Materials Science and Engineering, Beijing, 100084, China
Wenzhi Li
Affiliation:
Tsinghua University, Dept. of Materials Science and Engineering, Beijing, 100084, China
Fuzhai Cui
Affiliation:
Tsinghua University, Dept. of Materials Science and Engineering, Beijing, 100084, China
Hengde Li
Affiliation:
Tsinghua University, Dept. of Materials Science and Engineering, Beijing, 100084, China
Yu Wang
Affiliation:
Space Science and Application Research Center, Beijing, 10080, China
Dawei You
Affiliation:
Space Science and Application Research Center, Beijing, 10080, China
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Abstract

Diamondlike carbon-nitrogen films on silicon (111) wafer and tungsten carbide plates have been prepared by using dual ion beam sputtering deposition and simultaneous bombardment by N+ with energies of 100-800 eV at room temperature. These films retain their diamondlike characteristics. However, as the nitrogen content increases from 10% at to 20% at., the Auger electron spectroscopy spectra of films change obviously in fine structure and the main Cls peak of carbon atoms in the X-ray photoelectron spectroscopy spectra shifts to 285.65 eV. The maximum hardness of these films on tungsten carbide plates is about 5260 kg/mm2. The films have an amorphous structure and smooth surface. The state of nitrogen in films and its influence on the structure and properties of films are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Liu, A.Y. and Cohen, M.L., Science 245 (1989) 841.Google Scholar
2 Liu, A.Y. and Cohen, M.L., Phys. Rev. B41 (1990) 10727.Google Scholar
3 Cohen, M.L., Allamandola, L., Tielens, A., Bregman, J., Simposon, J.P.. Witterborn, F.C., Wooden, D. and Rank, D., J. Astrophys. 302 (1986) 737.Google Scholar
4 Khare, B.N., Sagan, C., Arakawa, E., Suits, F., Calcott, T.A. and Williams, M.W.. Icarus 60 (1984)Google Scholar
5 Han, H.X. and Feldman, B.J., Solid State Commun, 65 (1988) 921.Google Scholar
6 Chen, Ming Y., Lin, X., Dravid, V.P., Chung, Y.W., Wong, M.S. and Sproul, W.D., Surf. Coat. Technol., 54/ 55 (1992) 360.Google Scholar
7 Torng, C.J., Sivertsen, J.M., Judy, J.H. and Chang, C., J. Mater. Res., 5 (1990) 2490.Google Scholar
8 Fujimoto, F. and Ogata, K., Jan. J. Appl. Phys. 32 (1993) L420.Google Scholar
9 He, X.M., Li, W.Z., Li, H.D. and Fan, Y.D., Nucl. Instr. Meth. B82 (1993) 528.Google Scholar