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Effects of MeV Si Ions Modification on the Thermoelectric Properties of SiO2/SiO2+Cu Multilayer Thin Films

Published online by Cambridge University Press:  01 February 2011

John Chacha ,
S. Budak ,
Cydale Smith ,
Marcus Pugh ,
Kudus Ogbara ,
Kaveh Heidary ,
R. B. Johnson ,
Claudiu Muntele  and
D. ILA
John Chacha
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Normal, Alabama, United States
S. Budak*
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Normal, Alabama, United States
Cydale Smith
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
Marcus Pugh
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Normal, Alabama, United States
Kudus Ogbara
Affiliation:
[email protected], Alabama A&M University, Physics, Normal, Alabama, United States
Kaveh Heidary
Affiliation:
[email protected], Alabama A&M University, Electrical Engineering, Normal, Alabama, United States
R. B. Johnson
Affiliation:
[email protected], Alabama A&M University, Physics, Normal, Alabama, United States
Claudiu Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
D. ILA
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
*
*Corresponding author: S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: [email protected]
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Abstract

The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing K. We have prepared 100 alternating multi-nano layer of SiO2/SiO2+Cu superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed at the different fluences using the AAMU Pelletron ion beam accelerator to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric thin films before and after Si ion bombardments we have measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences.

Keywords

thermoelectricitynanostructureion-beam processing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD05-15
Copyright
Copyright © Materials Research Society 2010

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References

1 Li, Tao, Tang, Guangfa, Gong, Guangcai, Zhang, Guangqiang, Li, Nianping, Zhang, Lin, Applied Thermal Engineering 29 (2009) 2016–2021.Google Scholar
2 Xiong, Zhen, Chen, Xihong, Zhao, Xueying, Bai, Shengqiang, Huang, Xiangyang, Chen, Lidong, Solid State Sciences 11 (2009) 1612–1616.Google Scholar
3 Cheng, Chin-Hsiang, Huang, Shu-Yu, Cheng, Tsung-Chieh, International Journal of Heat and Mass Transfer 53 (2010) 2001–2011.Google Scholar
4 Budak, S. Muntele, C. Zheng, B. Ila, D. Nuc. Instr. and Meth. B 261 (2007) 1167.Google Scholar
5 Guner, S. Budak, S. Minamisawa, R. A. Muntele, C. Ila, D. Nuc. Instr. and Meth. B 266 (2008) 1261.Google Scholar
6 Budak, S. Guner, S. Minamisawa, R. A. and ILA, D. Surface and Coating Technology 203 (2009) 2479–2481.Google Scholar
7 Holland, L. R. Smith, R. C. J. Apl. Phys. 37 (1966) 4528.Google Scholar
8 Cahill, D. G. Katiyar, M. Abelson, J. R. Phys. Rev. B 50 (1994) 6077.Google Scholar
9 Tasciuc, T. B. Kumar, A.R. Chen, G. Rev. Sci. Instrum. 72 (2001) 2139.Google Scholar