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Effects of MeV Si ion bombardments on the Properties of Nano-layers of SiO2/SiO2+Zn4Sb3

Published online by Cambridge University Press:  01 February 2011

S. Budak
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, PO Box 1447, Huntsville, AL, 35762, United States, 256-372-5894, 256-372-5868
S. Guner
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, PO Box 1447, Normal, AL, 35762, United States
C. Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, PO Box 1447, Normal, AL, 35762, United States
C. C. Smith
Affiliation:
[email protected], NASA, MSFC,, MSFC, Huntsville, AL, 35812, United States
R. L. Zimmerman
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, PO Box 1447, Normal, AL, 35762, United States
D. ILA
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, PO Box 1447, Normal, AL, 35762, United States
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Abstract

We prepared 8 periodic nano-layers of SiO2/SiO2+Zn4Sb3. The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanostructures of Zn4Sb3 with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanostructures. The electrical and thermal properties of the layered structures were studied before and after bombardment by 5 MeV Si ions at various fluences to form nanostructures in layers of SiO2 containing Zn4Sb3. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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