Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-20T00:44:28.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of MBE growth on the optical properties of AlGaN quantum wells

Published online by Cambridge University Press:  16 September 2011

W. Feng ,
G. Rajanna ,
S. Sohal ,
S. A. Nikishin ,
A. A. Bernussi  and
M. Holtz
W. Feng
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
G. Rajanna
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
S. Sohal
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Physics, Texas Tech University, Lubbock, TX 79409, U.S.A.
S. A. Nikishin
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
A. A. Bernussi
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, U.S.A.
M. Holtz
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, TX 79409, U.S.A. Department of Physics, Texas Tech University, Lubbock, TX 79409, U.S.A.
Get access

Abstract

Optical studies are reported of multiple quantum wells, based on AlGaN for emission in the deep ultraviolet. The materials are grown using gas source molecular beam epitaxy in a growth regime which transitions from purely two-dimensional to mixed two- and three-dimensional well formation. Low temperature photoluminescence and absorption measurements are used to obtain the Stokes shift, and temperature dependence is used to estimate the thermal activation energy associated with photoluminescence intensity decrease. Variations in these energies are attributed to the well morphologies.

Keywords

crystal growthmolecular beam epitaxy (MBE)epitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1289: Symposium H – Controlling Material Properties and Charge-Carrier Interactions with Quantum-Dot Coupling , 2011 , mrsf10-1289-h05-12
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tanaka, S., Hirayama, H., Iwai, S., and Aoyagi, Y., Report of Research Center of Ion Beam Technology, Hosei University, Supplement No 15, March 1997 (1997) 65.Google Scholar
[2] Hirayama, H., Yatabe, T., Noguchi, N., Ohashi, T., and Kamata, N., Applied Physics Letters 91 (2007)Google Scholar
[3] Daudin, B., Widmann, F., Feuillet, G., Samson, Y., Arlery, M., and Rouviere, J. L., Physical Review B 56 (1997) R7069.Google Scholar
[4] Widmann, F., Daudin, B., Feuillet, G., Samson, Y., Rouviere, J. L., and Pelekanos, N., Journal of Applied Physics 83 (1998) 7618.Google Scholar
[5] Collins, C. J., Sampath, A. V., Garrett, G. A., Sarney, W. L., Shen, H., Wraback, M., Nikiforov, A. Y., Cargill, G. S., and Dierolf, V., Applied Physics Letters 86 (2005)Google Scholar
[6] Garrett, G. A., Sampath, A. V., Collins, C. J., Readinger, E. D., Sarney, W. L., Shen, H., Wraback, M., SoukhoveW, V., Usikov, A., and Dmitriev, V., Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6 3 (2006) 2125.Google Scholar
[7] Shatalov, M., Yang, J. W., Sun, W. H., Kennedy, R., Gaska, R., Liu, K., Shur, M., and Tamulaitis, G., Journal of Applied Physics 105 (2009)Google Scholar
[8] Borisov, B., Nikishin, S., Kuryatkov, V., and Temkin, H., Appl.Phys.Lett. 87 (2005) 191902.Google Scholar
[9] Borisov, B. A., Nikishin, S. N., Kuryatkov, V. V., Kuchinskii, V. I., Holtz, M., and Temkin, H., Semiconductors 40 (2006) 454.Google Scholar
[10] Nikishin, S. A., Borisov, B. A., Kuryatkov, V. V., Holtz, M., Garrett, G. A., Sarney, W. L., Sampath, A. V., Shen, H., and Wraback, M., Japanese Journal of Applied Physics 47 (2008) 1556.Google Scholar
[11] Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S. A., and Temkin, H., Appl.Phys.Lett. 80 (2002) 3682.Google Scholar