Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-05T16:57:38.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Line Width, Thickness and Alloy Temperature on the Breakdown Energy of thin Aluminum Lines

Published online by Cambridge University Press:  25 February 2011

Rahul Jairath ,
Katnesh Gadepallu ,
Brad Bradford ,
James Shibley ,
Egil Castel  and
Rajeeva Lahri
Rahul Jairath
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Katnesh Gadepallu
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Brad Bradford
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
James Shibley
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Egil Castel
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Rajeeva Lahri
Affiliation:
Technology Development, National Semiconductor Corporation, Mail Stop E-120 2900 Semiconductor Drive, Santa Clara, CA 95052.
Get access

Abstract

Reliability issues have assumed greater importance as critical dimensions in microelectronic devices have entered the sub-micron regime. Wafer level reliability tests have been performed to study the breakdown energy of aluminum. 1500Å, 3500Å, 5500Å aluminum films were sputter deposited at 400 °C on oxide-on-silicon substrates. Test structures with line widths varying from 1 μm to 10 μm were defined on the metal film. The aluminum lines were then passivated using a stacked layer of silicon dioxide and silicon nitride. Finally, the substrates were alloyed at temperatures from 400°C to 450 °C. An attempt has been made to minimize process variability effects by processing the substrates through the same process conditions as far as possible. Failure was induced by stressing the metal lines with high DC current densities and at a constant slew rate. The samples were characterized using optical and scanning electron microscopy. Failure analysis of the samples processed under the different conditions will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 723
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ghate, P. B., “Industrial Perspective on Reliability of VLSI Devices”, Mat. Res. Soc. Symp., Proc. Vol. 225., pp. 207–218, 1991.Google Scholar
2. Hong, C. C. and Crook, D. L., “Breakdown Energy of Metal (BEM) - A New Technique for Monitoring Metallization Reliability at Wafer Level” IEEE/IRPS Proc, pp. 118–114, 1985.Google Scholar
3. Scoggan, G. A., Agarwala, B. N., Peressini, P. P. and Brouillard, A., “Width Dependence of Electromigration Life in Al-Cu, Al-Cu-Si, and Ag Conductors” Proc. IEEE/IRPS, pp. 151–158, 1975.Google Scholar
4. Root, B. J. and Turner, T., “Wafer Level Electromigration Tests for Production Monitoring”, Proc. IEEE/IRPS, pp. 100–107, 1985.Google Scholar
5. Kinsborn, E., Appl. Phys. Lett, 36, 968 (1980).Google Scholar